Reaction Chemistry of ZnTe Metalorganic Vapor-Phase Epitaxy

Transformation of InAs islands to quantum ring structures by metalorganic vapor phase epitaxy.

The transformation of InAs islands to quantum rings (QRs) by metalorganic vapor phase epitaxy is investigated. After covering the InAs islands with a thin GaAs partial capping layer and annealing under tertiarybutylarsine (TBAs) flow, ring-shaped nanostructures with a density of 10(7)-10(9) cm(-2) are obtained at 500-600 °C. The effects of the growth temperature, annealing process and thickness...

Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy

The surface roughness of gallium arsenide ~001! films produced by metalorganic vapor-phase epitaxy has been studied as a function of temperature and growth rate by in situ scanning tunneling microscopy. Height–height correlation analysis reveals that the root-mean-height difference follows a power-law dependence on lateral separation, i.e., G(L)5kL, up to a critical distance Lc , after which it...

Fabrication of semiconductor Kagome lattice structure by selective area metalorganic vapor phase epitaxy

Structure of ordered and disordered InxGa1 xP(001) surfaces prepared by metalorganic vapor phase epitaxy

Ordered and disordered InGaP(001) films were grown by metalorganic vapor-phase epitaxy and studied by low energy electron diffraction, reflectance difference spectroscopy, and X-ray photoemission spectroscopy. Both alloy surfaces were covered with a monolayer of buckled phosphorus dimers, where half of the phosphorus atoms were terminated with hydrogen. Ordered InGaP(001) appeared indium rich, ...

Carbon Doping of InAlAs Layers Grown by Metalorganic Vapor Phase Epitaxy

Carbon doped AlInAs layers grown by low pressure metalorganic vapor phase epitaxy are investigated as a function of growth temperature. Photoluminescence spectra show a signi cant drop in peak intensity as the growth temperature is reduced, due to the incorporation of non-radiative defects. It is shown that the C doping is not related to the deterioration of the optical properties of the layers...